甲基矽烷 ( MMS )
MMS; monomethylsilane contains a direct silicon-carbon (Si-C) bond, making it an ideal candidate for processes where structural integrity and etch resistance are paramount.
Deposition of Silicon Carbide (SiC) and SiC:H
The primary application of MMS is the deposition of amorphous silicon carbide or hydrogenated silicon carbide films via Plasma-Enhanced Chemical Vapor Deposition (PECVD).
Carbon-Doped Silicon (Si:C) Epitaxy
In the fabrication of advanced FinFETs and planar CMOS devices, MMS is used in Selective Epitaxial Growth (SEG) to create carbon-doped silicon.
Strain Engineering: By incorporating carbon atoms (which are smaller than silicon) into the silicon lattice, MMS creates "tensile strain." This strain increases the mobility of electrons in the channel of n-channel transistors (nMOS), significantly boosting device speed and performance.
Source/Drain Engineering: It is often used during the growth of source and drain regions to precisely control the lattice constants.
Low-k Dielectric Modification
As devices shrink, reducing the dielectric constant (k-value) of insulating materials is critical to minimize parasitic capacitance.
Silicon Carbonitride (SiCN) Thin Films
When combined with nitrogen-containing precursors (like ammonia, NH3), MMS is used to deposit silicon carbonitride films.